STF26N60DM6
- Mfr.Part #
- STF26N60DM6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A TO220FP
- Stock
- 93
- In Stock :
- 93
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 30W Tc
- Rds On (Max) @ Id, Vgs :
- 195m Ω @ 9A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ DM6
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 100V
- FET Type :
- N-Channel
- Base Part Number :
- STF26
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Datasheets
- STF26N60DM6

N-Channel 195m Ω @ 9A, 10V ±25V 940pF @ 100V 24nC @ 10V 600V TO-220-3 Full Pack
STF26N60DM6 Description
The high-voltage N-channel Power MOSFET STF26N60DM6 is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr), and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
STF26N60DM6 Features
Fast-recovery body diode
Lower RDS(on) per area vs the previous generation
Low gate charge, input capacitance, and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
STF26N60DM6 Applications
Switching applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
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