STF25NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Series :

FDmesh™ II

Pulsed Drain Current-Max (IDM) :

84A

Base Part Number :

STF25

Case Connection :

Isolated

Power Dissipation :

40W

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Width :

4.6mm

Number of Terminations :

3

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Height :

16.4mm

Avalanche Energy Rating (Eas) :

850 mJ

Threshold Voltage :

4V

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Number of Elements :

1

Length :

10.4mm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

21A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

40W Tc

Turn-Off Delay Time :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Mount :

Through Hole

Radiation Hardening :

No

ECCN Code :

EAR99

Turn On Delay Time :

60 ns

Rise Time :

30ns

Fall Time (Typ) :

40 ns

JEDEC-95 Code :

TO-220AB