STF25NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Number of Terminations :

3

Rise Time :

18ns

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

850 mJ

Fall Time (Typ) :

24 ns

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

84A

JESD-609 Code :

e3

Voltage - Rated DC :

600V

Series :

MDmesh™ II

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Base Part Number :

STF25

Power Dissipation :

40W

Resistance :

170mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

ECCN Code :

EAR99

Case Connection :

Isolated

Dual Supply Voltage :

600V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Turn-Off Delay Time :

94 ns

Current Rating :

20A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Termination :

Through Hole

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

3 V

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Continuous Drain Current (ID) :

21A

Power Dissipation-Max :

40W Tc

Vgs (Max) :

±25V

Terminal Finish :

Matte Tin (Sn) - annealed

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

24.5 ns

Mount :

Through Hole