STF25N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

260m Ω @ 19.5A, 10V

Mounting Type :

Through Hole

Power Dissipation :

40W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

78A

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 100V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Rise Time :

13ns

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.26Ohm

Continuous Drain Current (ID) :

19.5A

Series :

SuperMESH5™

Power Dissipation-Max :

40W Tc

Factory Lead Time :

17 Weeks

Number of Terminations :

3

Base Part Number :

STF25

Width :

4.6mm

Radiation Hardening :

No

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Turn-Off Delay Time :

60 ns

Avalanche Energy Rating (Eas) :

200 mJ

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Element Configuration :

Single

Height :

16.4mm

Turn On Delay Time :

25 ns

Vgs(th) (Max) @ Id :

5V @ 100µA

Length :

10.6mm

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Number of Elements :

1

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

800V