STF25N10F7
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- Mfr.Part #
- STF25N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 19A TO220FP
- Stock
- 3,593
- In Stock ：
- 3,593
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Series :
- DeepGATE™, STripFET™ VII
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 14.8 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Weight :
- 329.988449mg
- Power Dissipation-Max :
- 25W Tc
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 12.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 50V
- Rise Time :
- 14ns
- Continuous Drain Current (ID) :
- 19A
- Factory Lead Time :
- 37 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Height :
- 16.4mm
- Number of Pins :
- 3
- Turn On Delay Time :
- 9.8 ns
- Number of Channels :
- 1
- Length :
- 10.4mm
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 4.6 ns
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Base Part Number :
- STF25
- Width :
- 4.6mm
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STF25N10F7
N-Channel Tube 35m Ω @ 12.5A, 10V ±20V 920pF @ 50V 14nC @ 10V TO-220-3 Full Pack
STF25N10F7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 920pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 19A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14.8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STF25N10F7 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 14.8 ns
STF25N10F7 Applications
There are a lot of STMicroelectronics
STF25N10F7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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