STF24NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

500 mJ

Pulsed Drain Current-Max (IDM) :

76A

Drain-source On Resistance-Max :

0.19Ohm

Element Configuration :

Single

Turn On Delay Time :

25 ns

Number of Pins :

3

Series :

MDmesh™ II

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Power Dissipation :

40W

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Number of Elements :

1

Base Part Number :

STF24

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Power Dissipation-Max :

40W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Gate to Source Voltage (Vgs) :

25V

Rise Time :

10ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - annealed

Packaging :

Tube

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Number of Terminations :

3

FET Type :

N-Channel

Vgs (Max) :

±25V

Turn-Off Delay Time :

80 ns

Pin Count :

3

Continuous Drain Current (ID) :

19A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ