STF24N60M2
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- Mfr.Part #
- STF24N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 18A TO220FP
- Stock
- 17,716
- In Stock ：
- 17,716
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Height :
- 16.4mm
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 18A
- Turn-Off Delay Time :
- 60 ns
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 61 ns
- Base Part Number :
- STF24
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Series :
- MDmesh™ II Plus
- Power Dissipation :
- 30W
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Rise Time :
- 9ns
- Factory Lead Time :
- 16 Weeks
- Width :
- 4.6mm
- Turn On Delay Time :
- 14 ns
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 100V
- Power Dissipation-Max :
- 30W Tc
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 25V
- Length :
- 10.4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Datasheets
- STF24N60M2
N-Channel Tube 190m Ω @ 9A, 10V ±25V 1060pF @ 100V 29nC @ 10V TO-220-3 Full Pack
STF24N60M2 Overview
The maximum input capacitance of this device is 1060pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STF24N60M2 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
STF24N60M2 Applications
There are a lot of STMicroelectronics
STF24N60M2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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