STF23NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

FDmesh™ II

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

90 ns

Threshold Voltage :

4V

Width :

4.6mm

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21 ns

Operating Temperature :

150°C TJ

Packaging :

Tube

Continuous Drain Current (ID) :

19.5A

Number of Elements :

1

Power Dissipation :

35W

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Number of Terminations :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Height :

16.4mm

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Number of Pins :

3

Case Connection :

Isolated

JESD-609 Code :

e3

Length :

10.4mm

Package / Case :

TO-220-3 Full Pack

Rise Time :

45ns

Fall Time (Typ) :

40 ns

Avalanche Energy Rating (Eas) :

700 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Base Part Number :

STF23

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation-Max :

35W Tc

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

78A