STF23NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Terminal Finish :

Matte Tin (Sn) - annealed

Avalanche Energy Rating (Eas) :

700 mJ

Threshold Voltage :

4V

Continuous Drain Current (ID) :

19.5A

Mounting Type :

Through Hole

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pin Count :

3

Mount :

Through Hole

ECCN Code :

EAR99

Power Dissipation-Max :

35W Tc

Case Connection :

Isolated

Base Part Number :

STF23

Turn-Off Delay Time :

90 ns

Power Dissipation :

35W

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Factory Lead Time :

16 Weeks

Pulsed Drain Current-Max (IDM) :

78A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Height :

16.4mm

JESD-609 Code :

e3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

45ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

21 ns

REACH SVHC :

No SVHC

Series :

FDmesh™ II

Fall Time (Typ) :

40 ns

Length :

10.4mm

Operating Temperature :

150°C TJ

JEDEC-95 Code :

TO-220AB