STF23NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Resistance :

190mOhm

Power Dissipation :

30W

Packaging :

Tube

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

6.6 ns

FET Type :

N-Channel

Power Dissipation-Max :

30W Tc

Transistor Element Material :

SILICON

Width :

4.6mm

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Case Connection :

Isolated

Rise Time :

19ns

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Threshold Voltage :

3V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current - Continuous Drain (Id) @ 25°C :

17A Tc

ECCN Code :

EAR99

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

254 mJ

Pulsed Drain Current-Max (IDM) :

68A

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.5A, 10V

Continuous Drain Current (ID) :

17A

Pin Count :

3

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

29 ns

Series :

MDmesh™ II

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

REACH SVHC :

No SVHC

Length :

10.4mm

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 50V

Height :

16.4mm

Number of Pins :

3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

Base Part Number :

STF23

Turn-Off Delay Time :

71 ns