STF21NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Width :

4.6mm

Power Dissipation-Max :

30W Tc

FET Type :

N-Channel

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

68A

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STF21

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Threshold Voltage :

4V

Series :

FDmesh™ II

Turn-Off Delay Time :

70 ns

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

18 ns

Drain-source On Resistance-Max :

0.22Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Power Dissipation :

30W

Pin Count :

3

Rise Time :

16ns

Fall Time (Typ) :

48 ns

Element Configuration :

Single

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

17A

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Height :

16.4mm

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Operating Temperature :

150°C TJ

Packaging :

Tube

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON