STF21NM60N
- Mfr.Part #
- STF21NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 17A TO220FP
- Stock
- 8,016
- In Stock :
- 8,016
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 31 ns
- Turn-Off Delay Time :
- 84 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Number of Elements :
- 1
- Rise Time :
- 15ns
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 17A
- JESD-609 Code :
- e3
- Base Part Number :
- STF21
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 8.5A, 10V
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Current Rating :
- 17A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 50V
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- MDmesh™
- Package / Case :
- TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Voltage - Rated DC :
- 600V
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 68A
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 30W Tc
- Power Dissipation :
- 30W
- Drain-source On Resistance-Max :
- 0.22Ohm
- Case Connection :
- Isolated
- Datasheets
- STF21NM60N

N-Channel Tube 220m Ω @ 8.5A, 10V ±25V 1900pF @ 50V 66nC @ 10V TO-220-3 Full Pack
STF21NM60N Description
STF21NM60N is a 600v N-channel second-generation MDmesh? Power MOSFET. This series of devices implement the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. The STF21NM60N is, therefore, suitable for the most demanding high-efficiency converters.
STF21NM60N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
-
Drain-source voltage (VGS = 0): 600v
-
Gate- source voltage: ?à25v
STF21NM60N Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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