STF20NM65N

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Mfr.Part #
STF20NM65N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 650V 15A TO220FP
Stock
9,346
In Stock :
9,346

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Base Part Number :
STF20
Drain Current-Max (Abs) (ID) :
19A
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Width :
4.6mm
Series :
MDmesh™ II
Additional Feature :
AVALANCHE RATED
Length :
10.4mm
Terminal Finish :
Matte Tin (Sn)
Gate to Source Voltage (Vgs) :
25V
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
15A Tc
Lead Free :
Lead Free
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Case Connection :
Isolated
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
1280pF @ 50V
Power Dissipation :
40W
Rise Time :
10ns
Operating Temperature :
150°C TJ
Continuous Drain Current (ID) :
15A
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
15 ns
Mount :
Through Hole
FET Type :
N-Channel
Height :
16.4mm
Rds On (Max) @ Id, Vgs :
270m Ω @ 7.5A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Turn-Off Delay Time :
75 ns
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Threshold Voltage :
3V
Pbfree Code :
yes
Pin Count :
3
Vgs (Max) :
±25V
Avalanche Energy Rating (Eas) :
115 mJ
JESD-609 Code :
e3
Resistance :
270mOhm
Package / Case :
TO-220-3 Full Pack
Pulsed Drain Current-Max (IDM) :
60A
Transistor Element Material :
SILICON
Fall Time (Typ) :
20 ns
Power Dissipation-Max :
30W Tc
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
650V
Number of Pins :
3
Number of Elements :
1
Datasheets
STF20NM65N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF20NM65N from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STF20, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Number of Pins:3, STF20NM65N pinout, STF20NM65N datasheet PDF, STF20NM65N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF20NM65N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF20NM65N


N-Channel Tube 270m Ω @ 7.5A, 10V ±25V 1280pF @ 50V 44nC @ 10V TO-220-3 Full Pack

STF20NM65N Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 115 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1280pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 19A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STF20NM65N Features


the avalanche energy rating (Eas) is 115 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 60A.
a threshold voltage of 3V


STF20NM65N Applications


There are a lot of STMicroelectronics
STF20NM65N applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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