STF20NM60D

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

12ns

Mount :

Through Hole

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

80A

Power Dissipation-Max :

45W Tc

Series :

FDmesh™

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn On Delay Time :

25 ns

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Base Part Number :

STF20

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Fall Time (Typ) :

22 ns

Power Dissipation :

45W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.29Ohm

Number of Terminations :

3

Pin Count :

4

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Avalanche Energy Rating (Eas) :

700 mJ

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Continuous Drain Current (ID) :

20A

Terminal Position :

Single

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE