STE250NS10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn-Off Delay Time :

1.1 μs

Mounting Type :

Chassis Mount

ECCN Code :

EAR99

Number of Terminations :

4

Packaging :

Tube

Base Part Number :

STE250

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 125A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Case Connection :

Isolated

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

880A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V

Package / Case :

ISOTOP

Continuous Drain Current (ID) :

220A

Turn On Delay Time :

110 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

220A Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

500W

Resistance :

5.5mOhm

Input Capacitance (Ciss) (Max) @ Vds :

31000pF @ 25V

Rise Time :

380ns

Width :

25.5mm

Transistor Element Material :

SILICON

Height :

9.1mm

Series :

STripFET™

Length :

38.2mm

Avalanche Energy Rating (Eas) :

800 mJ

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Terminal Position :

UPPER

Threshold Voltage :

3V

Fall Time (Typ) :

300 ns

Pin Count :

4

Number of Elements :

1

Terminal Form :

UNSPECIFIED

Current Rating :

220A

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Power Dissipation-Max :

500W Tc

Gate Charge (Qg) (Max) @ Vgs :

900nC @ 10V