STE180NE10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

3 V

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

6 Ω @ 40A, 10V

Transistor Application :

SWITCHING

Isolation Voltage :

2.5kV

Base Part Number :

STE1

Fall Time (Typ) :

440 ns

Terminal Position :

UPPER

Pulsed Drain Current-Max (IDM) :

360A

Pin Count :

4

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

795nC @ 10V

Reach Compliance Code :

not_compliant

Mounting Type :

Chassis Mount

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

720 mJ

Packaging :

Tube

REACH SVHC :

No SVHC

Number of Elements :

1

Mount :

Chassis Mount, Screw

Input Capacitance (Ciss) (Max) @ Vds :

21000pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

360W

Drain to Source Breakdown Voltage :

100V

Case Connection :

Isolated

Threshold Voltage :

3V

Terminal Finish :

Nickel (Ni)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

430 ns

Operating Temperature :

-55°C~150°C TJ

Current Rating :

180A

Package / Case :

ISOTOP

Number of Pins :

4

Series :

STripFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

UNSPECIFIED

Power Dissipation-Max :

360W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Rise Time :

600ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

6Ohm

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

180A

Lead Free :

Lead Free