STDV3055L104T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

23 Weeks

Drain-source On Resistance-Max :

0.14Ohm

Drain Current-Max (Abs) (ID) :

12A

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rds On (Max) @ Id, Vgs :

104m Ω @ 6A, 5V

FET Type :

N-Channel

Vgs (Max) :

±15V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

61 mJ

Mounting Type :

Surface Mount

Pbfree Code :

yes

Published :

2008

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

1.5W Ta 48W Tj

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

45A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V