STD3NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

188pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Series :

MDmesh™ II

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

86 mJ

Continuous Drain Current (ID) :

3.3A

Turn-Off Delay Time :

23 ns

Width :

6.2mm

Power Dissipation-Max :

50W Tc

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time :

6 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Height :

2.4mm

Number of Terminations :

2

Number of Elements :

1

Length :

6.6mm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Pins :

3

Base Part Number :

STD3N

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Fall Time (Typ) :

31 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 1.65A, 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Resistance :

1.8Ohm

Rise Time :

9.5ns

Element Configuration :

Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

50W