STD3NM50T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Series :

MDmesh™

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

12A

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

46W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Power Dissipation-Max :

46W Tc

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Rise Time :

10ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Voltage - Rated DC :

550V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Element Configuration :

Single

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain Current-Max (Abs) (ID) :

3A

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

3A

Fall Time (Typ) :

9 ns

Drain to Source Breakdown Voltage :

550V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

130 mJ

Base Part Number :

STD3N

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3A

Lead Free :

Lead Free

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.5A, 10V

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

3Ohm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant