STD3NK80ZT4
- Mfr.Part #
- STD3NK80ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.5A DPAK
- Stock
- 13,950
- In Stock :
- 13,950
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Threshold Voltage :
- 3.75V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 800V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 40 ns
- JESD-609 Code :
- e3
- Rise Time :
- 27ns
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1.25A, 10V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Power Dissipation :
- 70W
- Turn-Off Delay Time :
- 36 ns
- Series :
- SuperMESH™
- Width :
- 6.2mm
- Transistor Application :
- SWITCHING
- Max Junction Temperature (Tj) :
- 150°C
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Number of Channels :
- 1
- Pin Count :
- 3
- Turn On Delay Time :
- 17 ns
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 1.25A
- Power Dissipation-Max :
- 70W Tc
- Base Part Number :
- STD3N
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 800V
- Current Rating :
- 2.5A
- Lead Free :
- Lead Free
- Length :
- 6.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 2.52mm
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 4.5Ohm
- Datasheets
- STD3NK80ZT4
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N-Channel Tape & Reel (TR) 4.5 Ω @ 1.25A, 10V ±30V 485pF @ 25V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK80ZT4 Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using the SuperMESHTM technology, which is an improvement on the well-known PowerMESHTM. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, are complemented by this series.
STD3NK80ZT4 Features
-
Extremely high dv/dt capability
-
100% avalanche tested
-
Gate charge minimized
-
Zener-protected
STD3NK80ZT4 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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