STD3NK80Z-1
- Mfr.Part #
- STD3NK80Z-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.5A IPAK
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Width :
- 2.4mm
- Continuous Drain Current (ID) :
- 1.25A
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Elements :
- 1
- Height :
- 6.2mm
- ECCN Code :
- EAR99
- Power Dissipation :
- 70W
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Series :
- SuperMESH™
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STD3N
- Length :
- 6.6mm
- Fall Time (Typ) :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 2.5A
- Threshold Voltage :
- 3.75V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1.25A, 10V
- Power Dissipation-Max :
- 70W Tc
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 36 ns
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 4.535924g
- Drain to Source Breakdown Voltage :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 27ns
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 17 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Terminations :
- 3
- Datasheets
- STD3NK80Z-1

N-Channel Tube 4.5 Ω @ 1.25A, 10V ±30V 485pF @ 25V 19nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD3NK80Z-1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 485pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.25A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.2.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 36 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.75V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STD3NK80Z-1 Features
a continuous drain current (ID) of 1.25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 36 ns
a threshold voltage of 3.75V
STD3NK80Z-1 Applications
There are a lot of STMicroelectronics
STD3NK80Z-1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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