STD3NK60ZD
- Mfr.Part #
- STD3NK60ZD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.4A DPAK
- Stock
- 34,944
- In Stock :
- 34,944
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Series :
- SuperFREDmesh™
- Power Dissipation-Max :
- 45W Tc
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn-Off Delay Time :
- 19 ns
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Power Dissipation :
- 45W
- Base Part Number :
- STD3N
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 11.8nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 600V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 14 ns
- Continuous Drain Current (ID) :
- 2.4A
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 14ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.2A, 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 311pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Element Configuration :
- Single
- Datasheets
- STD3NK60ZD
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N-Channel Tape & Reel (TR) 3.6 Ω @ 1.2A, 10V ±30V 311pF @ 25V 11.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NK60ZD Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 311pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Peak drain current is 9.6A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD3NK60ZD Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 9.6A.
STD3NK60ZD Applications
There are a lot of STMicroelectronics
STD3NK60ZD applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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