STD3NK50Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Nominal Vgs :

3.75 V

Power Dissipation-Max :

45W Tc

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

3.75V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Series :

SuperMESH™

Fall Time (Typ) :

14 ns

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

500V

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Radiation Hardening :

No

JESD-609 Code :

e3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

9.2A

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 1.15A, 10V

Element Configuration :

Single

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

1.15A

Number of Elements :

1

REACH SVHC :

No SVHC

Base Part Number :

STD3N

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Vgs (Max) :

±30V

Rise Time :

13ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 50μA