STD3N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

8.5 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.2mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Contact Plating :

Tin

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Series :

SuperMESH5™

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Avalanche Energy Rating (Eas) :

65 mJ

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Base Part Number :

STD3N

Fall Time (Typ) :

25 ns

Drain to Source Breakdown Voltage :

800V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.5A

Factory Lead Time :

17 Weeks

Length :

6.6mm

Power Dissipation-Max :

60W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Power Dissipation :

110W

Turn-Off Delay Time :

20.5 ns

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Height :

2.4mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 100V

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1A, 10V

ECCN Code :

EAR99

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 100µA

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Rise Time :

7.5ns