STD3N62K3
- Mfr.Part #
- STD3N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.7A DPAK
- Stock
- 8,463
- In Stock :
- 8,463
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Height :
- 2.4mm
- Continuous Drain Current (ID) :
- 2.7A
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Length :
- 6.6mm
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 45W Tc
- JEDEC-95 Code :
- TO-252AA
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 45W
- Drain to Source Breakdown Voltage :
- 620V
- Turn On Delay Time :
- 9 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 6.8ns
- Series :
- SuperMESH3™
- Number of Terminations :
- 2
- Resistance :
- 2.5Ohm
- Number of Pins :
- 3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Width :
- 6.2mm
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 385pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.4A, 10V
- REACH SVHC :
- No SVHC
- Base Part Number :
- STD3N
- Threshold Voltage :
- 3.75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 15.6 ns
- Datasheets
- STD3N62K3
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N-Channel Tape & Reel (TR) 2.5 Ω @ 1.4A, 10V ±30V 385pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3N62K3 Description
These MDmeshTM K3 Power MOSFETs are the product of STMicroelectronics' MDmeshTM technology being improved, as well as a new optimized vertical structure. These devices have a low on-resistance, excellent dynamic performance, and great avalanche capability, making them ideal for the most demanding applications.
STD3N62K3 Features
? Avalanche-proofed to the nth degree
? Exceptional dv/dt capability
? Inherent capacitance is extremely low.
? Improved reverse recovery capabilities of diodes
? Protected by a zener
STD3N62K3 Applications
Switching applications
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