STD3N40K3
- Mfr.Part #
- STD3N40K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N CH 400V 2A DPAK
- Stock
- 11,295
- In Stock :
- 11,295
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Drain to Source Breakdown Voltage :
- 400V
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Base Part Number :
- STD3N
- Input Capacitance (Ciss) (Max) @ Vds :
- 165pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Turn-Off Delay Time :
- 18 ns
- Fall Time (Typ) :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 900mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Rise Time :
- 8ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 2A
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Series :
- SuperMESH3™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Power Dissipation :
- 30W
- Power Dissipation-Max :
- 30W Tc
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Datasheets
- STD3N40K3
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N-Channel Tape & Reel (TR) 3.4 Ω @ 900mA, 10V ±30V 165pF @ 50V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD3N40K3 Overview
The maximum input capacitance of this device is 165pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=400V, and ID flows to VDS at 400VVDS, the drain-source breakdown voltage is 400V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 18 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STD3N40K3 Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 18 ns
STD3N40K3 Applications
There are a lot of STMicroelectronics
STD3N40K3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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