STD38NH02L-1
- Mfr.Part #
- STD38NH02L-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 38A IPAK
- Stock
- 37,469
- In Stock :
- 37,469
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Power Dissipation-Max :
- 40W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 25 ns
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 19A, 10V
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Pin Count :
- 3
- Series :
- STripFET™ III
- Power Dissipation :
- 40W
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 25V
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 152A
- Reach Compliance Code :
- Unknown
- Drain to Source Breakdown Voltage :
- 24V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STD38
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 12 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Continuous Drain Current (ID) :
- 38A
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Number of Terminations :
- 3
- Rise Time :
- 62ns
- Datasheets
- STD38NH02L-1

N-Channel Tube 13.5m Ω @ 19A, 10V ±20V 1070pF @ 25V 24nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
STD38NH02L-1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1070pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 38A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=24V. And this device has 24V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 152A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
STD38NH02L-1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 152A.
STD38NH02L-1 Applications
There are a lot of STMicroelectronics
STD38NH02L-1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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