STD36NH02L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn-Off Delay Time :

22 ns

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

200 mJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

30A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Rise Time :

70ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Mount :

Surface Mount

Number of Terminations :

2

Case Connection :

DRAIN

Power Dissipation-Max :

45W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

24V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation :

45W

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.026ohm

Terminal Form :

Gull wing

Base Part Number :

STD36

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Series :

STripFET™ III

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Element Material :

SILICON