STD35N3LH5
- Mfr.Part #
- STD35N3LH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 35A DPAK
- Stock
- 5,236
- In Stock :
- 5,236
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Turn-Off Delay Time :
- 20 ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 725pF @ 25V
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 30V
- Resistance :
- 16mOhm
- Power Dissipation-Max :
- 35W Tc
- Continuous Drain Current (ID) :
- 35A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Series :
- STripFET™ V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 4 ns
- Power Dissipation :
- 35W
- Base Part Number :
- STD35
- Fall Time (Typ) :
- 3.5 ns
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Rise Time :
- 4ns
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Datasheets
- STD35N3LH5
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N-Channel Tape & Reel (TR) 16m Ω @ 15A, 10V ±20V 725pF @ 25V 6nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD35N3LH5 Overview
A device's maximal input capacitance is 725pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 35A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STD35N3LH5 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
STD35N3LH5 Applications
There are a lot of STMicroelectronics
STD35N3LH5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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