STD1802T4
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- Mfr.Part #
- STD1802T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 11,519
- In Stock ：
- 11,519
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Base Part Number :
- STD18
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Pin Count :
- 3
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Configuration :
- Single
- Transistor Type :
- NPN
- Terminal Position :
- Single
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Max Power Dissipation :
- 15W
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 15W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 8 Weeks
- Datasheets
- STD1802T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD1802T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics
STD1802T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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