SSW4N60BTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

3.13W (Ta), 100W (Tc)

Vgs (Max) :

±30V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

600 V

FET Type :

N-Channel

Package :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 2A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Surface Mount

Supplier Device Package :

D2PAK

Input Capacitance (Ciss) (Max) @ Vds :

920 pF @ 25 V

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Series :

-

Product Status :

Active