SSU1N50BTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

100 mJ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

520V

Continuous Drain Current (ID) :

1.3A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Rise Time :

40ns

Packaging :

Tube

Radiation Hardening :

No

Fall Time (Typ) :

35 ns

Power Dissipation-Max :

2.5W Ta 26W Tc

Number of Elements :

1

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 650mA, 10V

Weight :

343.08mg

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

5A

FET Type :

N-Channel

Mount :

Through Hole

Turn On Delay Time :

14 ns

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1.3A Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Element Configuration :

Single

Power Dissipation :

2.5W