SSR1N60BTM
- Mfr.Part #
- SSR1N60BTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 900MA DPAK
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 900mA (Tc)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 12Ohm @ 450mA, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- -
- Product Status :
- Obsolete
- Technology :
- MOSFET (Metal Oxide)
- Supplier Device Package :
- TO-252, (D-Pak)
- Package :
- Bulk
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 215 pF @ 25 V
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 600 V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.7 nC @ 10 V
- Power Dissipation (Max) :
- 2.5W (Ta), 28W (Tc)
- FET Type :
- N-Channel
- Datasheets
- SSR1N60BTM

MOSFET (Metal Oxide) N-Channel 12Ohm @ 450mA, 10V ±30V 215 pF @ 25 V 7.7 nC @ 10 V 600 V TO-252-3, DPak (2 Leads + Tab), SC-63
SSR1N60BTM Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 215 pF @ 25 V.Operating this transistor requires a 600 V drain to source voltage (Vdss).
SSR1N60BTM Features
a 600 V drain to source voltage (Vdss)
SSR1N60BTM Applications
There are a lot of Fairchild Semiconductor
SSR1N60BTM applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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