SSP45N20B_FP001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Rds On (Max) @ Id, Vgs :

65mOhm @ 17.5A, 10V

Turn-Off Delay Time :

360 ns

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Rds On Max :

65 mΩ

Input Capacitance :

4.3nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

176W

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drain to Source Resistance :

65mOhm

Published :

2001

Rise Time :

340ns

RoHS Status :

RoHS Compliant

Packaging :

Tube

Fall Time (Typ) :

270 ns

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

35A

Supplier Device Package :

TO-220-3

Power Dissipation-Max :

176W Tc

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Mount :

Through Hole