SSP1N50B
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- Mfr.Part #
- SSP1N50B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 2,000
- In Stock ：
- 2,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 4.1 Ω
- Drain to Source Breakdown Voltage :
- 500 V
- RoHS :
- Compliant
- Gate to Source Voltage (Vgs) :
- 30 V
- Power Dissipation :
- 36 W
- Min Operating Temperature :
- -55 °C
- Resistance :
- 5.5 Ω
- Element Configuration :
- Single
- Rise Time :
- 40 ns
- Max Operating Temperature :
- 150 °C
- Turn-Off Delay Time :
- 35 ns
- Continuous Drain Current (ID) :
- 1.5 A
- Datasheets
- SSP1N50B
SSP1N50B Overview
This device has a continuous drain current (ID) of [1.5 A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500 V, the drain-source breakdown voltage is 500 V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.MOSFETs have 4.1 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30 V volts.
SSP1N50B Features
a continuous drain current (ID) of 1.5 A
a drain-to-source breakdown voltage of 500 V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 4.1 Ω
SSP1N50B Applications
There are a lot of ON Semiconductor
SSP1N50B applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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