SSM5N16FUTE85LF
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- Mfr.Part #
- SSM5N16FUTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 100MA USV
- Stock
- 15,075
- In Stock ：
- 15,075
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.1A
- Operating Temperature :
- 150°C TJ
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 70 ns
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 20V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Number of Channels :
- 2
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 100mA
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 10mA, 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9.3pF @ 3V
- Gate to Source Voltage (Vgs) :
- 1.1V
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 125 ns
- Element Configuration :
- Dual
- Series :
- π-MOSVI
- Power Dissipation-Max :
- 200mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Ta
- Datasheets
- SSM5N16FUTE85LF
N-Channel Cut Tape (CT) 3 Ω @ 10mA, 4V ±10V 9.3pF @ 3V 5-TSSOP, SC-70-5, SOT-353
SSM5N16FUTE85LF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9.3pF @ 3V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [0.1A] according to its drain current.It is [125 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 70 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 1.1V.A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4V).
SSM5N16FUTE85LF Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 125 ns
SSM5N16FUTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM5N16FUTE85LF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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