SSM4K27CTTPL3
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- Mfr.Part #
- SSM4K27CTTPL3
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 500MA CST4
- Stock
- 27,086
- In Stock ：
- 27,086
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4V
- Package / Case :
- 4-SMD, No Lead
- Power Dissipation :
- 400mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 174pF @ 10V
- Published :
- 2009
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 12 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±12V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.1V @ 1mA
- Drain to Source Breakdown Voltage :
- 20V
- Rds On (Max) @ Id, Vgs :
- 205m Ω @ 250mA, 4V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Element Configuration :
- Single
- Series :
- U-MOSIII
- Continuous Drain Current (ID) :
- 500mA
- Power Dissipation-Max :
- 400mW Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 10 ns
- FET Type :
- N-Channel
- Datasheets
- SSM4K27CTTPL3
N-Channel Tape & Reel (TR) 205m Ω @ 250mA, 4V ±12V 174pF @ 10V 4-SMD, No Lead
SSM4K27CTTPL3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 174pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 0.5A.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4V).
SSM4K27CTTPL3 Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
SSM4K27CTTPL3 Applications
There are a lot of Toshiba Semiconductor and Storage
SSM4K27CTTPL3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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