SSM3K56MFV,L3F

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Mfr.Part #
SSM3K56MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-723
Datasheet
Download
Description
MOSFET N-CH 20V 800MA VESM
Stock
1,137
In Stock :
1,137

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
8V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
16 Weeks
Mount :
Surface Mount
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
1V @ 1mA
Series :
U-MOSVII-H
Continuous Drain Current (ID) :
800mA
Input Capacitance (Ciss) (Max) @ Vds :
55pF @ 10V
Package / Case :
SOT-723
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
800mA Ta
Radiation Hardening :
No
Turn On Delay Time :
5.5 ns
Rds On (Max) @ Id, Vgs :
235m Ω @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs :
1nC @ 4.5V
Operating Temperature :
150°C TJ
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Vgs (Max) :
±8V
Power Dissipation-Max :
150mW Ta
Drain to Source Voltage (Vdss) :
20V
RoHS Status :
RoHS Compliant
Published :
2014
Turn-Off Delay Time :
8.5 ns
Datasheets
SSM3K56MFV,L3F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K56MFV,L3F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-723, Operating Temperature:150°C TJ, Number of Pins:3, SSM3K56MFV,L3F pinout, SSM3K56MFV,L3F datasheet PDF, SSM3K56MFV,L3F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K56MFV,L3F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation SSM3K56MFV,L3F


N-Channel Tape & Reel (TR) 235m Ω @ 800mA, 4.5V ±8V 55pF @ 10V 1nC @ 4.5V 20V SOT-723

SSM3K56MFV,L3F Overview


A device's maximal input capacitance is 55pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 800mA, which represents the maximum continuous current it can conduct.Its turn-off delay time is 8.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).

SSM3K56MFV,L3F Features


a continuous drain current (ID) of 800mA
the turn-off delay time is 8.5 ns
a 20V drain to source voltage (Vdss)


SSM3K56MFV,L3F Applications


There are a lot of Toshiba Semiconductor and Storage
SSM3K56MFV,L3F applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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