SSM3K56FS,LF
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- Mfr.Part #
- SSM3K56FS,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 800MA SSM
- Stock
- 49,501
- In Stock ：
- 49,501
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- RoHS Compliant
- Series :
- U-MOSVII-H
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Power Dissipation-Max :
- 150mW Ta
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 20V
- Continuous Drain Current (ID) :
- 800mA
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- Power Dissipation :
- 150mW
- Published :
- 2014
- Package / Case :
- SC-75, SOT-416
- Number of Pins :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 235m Ω @ 800mA, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Ta
- Reach Compliance Code :
- Unknown
- Packaging :
- Cut Tape (CT)
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 1nC @ 4.5V
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 55pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Datasheets
- SSM3K56FS,LF
N-Channel Cut Tape (CT) 235m Ω @ 800mA, 4.5V ±8V 55pF @ 10V 1nC @ 4.5V SC-75, SOT-416
SSM3K56FS,LF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 55pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 800mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.
SSM3K56FS,LF Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 20V voltage
SSM3K56FS,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K56FS,LF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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