SSM3K56CT,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs (Max) :

±8V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

3-XFDFN

Mounting Type :

Surface Mount

Operating Temperature :

150°C TA

Power Dissipation-Max :

500mW Ta

Rds On (Max) @ Id, Vgs :

235m Ω @ 800mA, 4.5V

Series :

U-MOSVII-H

Continuous Drain Current (ID) :

800mA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

55pF @ 10V

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

RoHS Status :

RoHS Compliant