SSM3K35MFV(TPL3)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4V

Power Dissipation-Max :

150mW Ta

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Width :

800μm

Package / Case :

SOT-723

Power Dissipation :

150mW

Length :

1.2mm

Series :

π-MOSVI

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

10V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3 Ω @ 50mA, 4V

Published :

2007

Radiation Hardening :

No

Height :

500μm

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 3V

Factory Lead Time :

11 Weeks

Vgs(th) (Max) @ Id :

1V @ 1mA

Continuous Drain Current (ID) :

180mA

Number of Pins :

3

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Vgs (Max) :

±10V

Current - Continuous Drain (Id) @ 25°C :

180mA Ta