SSM3K35MFV,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±10V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Turn-Off Delay Time :

300 ns

Drain Current-Max (Abs) (ID) :

0.18A

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Turn On Delay Time :

115 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4V

Terminal Form :

Flat

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Package / Case :

SOT-723

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

4Ohm

Terminal Position :

Dual

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 3V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3 Ω @ 50mA, 4V

FET Type :

N-Channel

Operating Temperature :

150°C

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

180mA

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Pin Count :

3

Power Dissipation-Max :

150mW Ta

Number of Pins :

3

Vgs(th) (Max) @ Id :

1V @ 1mA