SSM3K35CTC,L3F
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- Mfr.Part #
- SSM3K35CTC,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 250MA CST3C
- Stock
- 70,148
- In Stock ：
- 70,148
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 36pF @ 10V
- Gate to Source Voltage (Vgs) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 0.34nC @ 4.5V
- Turn On Delay Time :
- 2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Height :
- 400μm
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 150mA, 4.5V
- Number of Channels :
- 1
- Power Dissipation-Max :
- 500mW Ta
- Continuous Drain Current (ID) :
- 250mA
- Turn-Off Delay Time :
- 6.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-101, SOT-883
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- 150°C TJ
- Published :
- 2015
- Vgs(th) (Max) @ Id :
- 1V @ 100µA
- Series :
- U-MOSIII
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SSM3K35CTC,L3F
N-Channel Tape & Reel (TR) 1.1 Ω @ 150mA, 4.5V ±10V 36pF @ 10V 0.34nC @ 4.5V SC-101, SOT-883
SSM3K35CTC,L3F Overview
A device's maximum input capacitance is 36pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 250mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 6.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.
SSM3K35CTC,L3F Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 6.5 ns
SSM3K35CTC,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K35CTC,L3F applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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