SSM3K329R,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Height :

880μm

Number of Channels :

1

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

3.5A

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

9.2 ns

Power Dissipation-Max :

1W Ta

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

123pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

1W

Vgs(th) (Max) @ Id :

1V @ 1mA

Published :

2007

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F3

RoHS Status :

RoHS Compliant

Series :

U-MOSIII

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

126m Ω @ 1A, 4V

Turn-Off Delay Time :

6.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Package / Case :

SOT-23-3 Flat Leads