SSM3K16FV,L3F

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Mfr.Part #
SSM3K16FV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-723
Datasheet
Download
Description
PB-F VESM S-MOS (LF) TRANSISTOR
Stock
8,949
In Stock :
8,949

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
SMD/SMT
Tradename :
MOSVI
Rds On (Max) @ Id, Vgs :
3Ohm @ 10mA, 4V
FET Feature :
-
Configuration :
Single
Minimum Operating Temperature :
-
Power Dissipation (Max) :
150mW (Ta)
RoHS :
Details
Continuous Drain Current Id :
0.1
Brand :
Toshiba
Vgs (Max) :
±10V
Mounting Type :
Surface Mount
Packaging :
Cut Tape
Channel Type :
N
FET Type :
N-Channel
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4V
Channel Mode :
Enhancement
Package :
Digi-Reel?
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
9.3 pF @ 3 V
Manufacturer :
Toshiba
Product Type :
MOSFET
Operating Temperature :
150°C
Number of Channels :
1 Channel
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
20 V
Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Package / Case :
SOT-723
Series :
-
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Supplier Device Package :
VESM
Vgs(th) (Max) @ Id :
1.1V @ 100μA
Datasheets
SSM3K16FV,L3F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K16FV,L3F from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C, Number of Channels:1 Channel, Package / Case:SOT-723, SSM3K16FV,L3F pinout, SSM3K16FV,L3F datasheet PDF, SSM3K16FV,L3F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K16FV,L3F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Cut Tape 3Ohm @ 10mA, 4V ±10V 9.3 pF @ 3 V 20 V SOT-723

SSM3K16FV,L3F Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9.3 pF @ 3 V.This transistor requires a drain-source voltage (Vdss) of 20 V.

SSM3K16FV,L3F Features


a 20 V drain to source voltage (Vdss)


SSM3K16FV,L3F Applications


There are a lot of Toshiba Semiconductor and Storage
SSM3K16FV,L3F applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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