SSM3K15ACT(TPL3)

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Mfr.Part #
SSM3K15ACT(TPL3)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-101, SOT-883
Datasheet
Download
Description
MOSFET N-CH 30V 100MA CST3
Stock
100
In Stock :
100

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
SC-101, SOT-883
Mounting Type :
Surface Mount
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
13.5pF @ 3V
Mount :
Surface Mount
Configuration :
Single
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4V
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Number of Elements :
1
Series :
U-MOSIII
Number of Pins :
3
Power Dissipation-Max :
100mW Ta
Published :
2014
Factory Lead Time :
52 Weeks
Power Dissipation :
100mW
Operating Temperature :
150°C TJ
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
100mA
Drain to Source Breakdown Voltage :
30V
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
3.6 Ω @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C :
100mA Ta
Vgs(th) (Max) @ Id :
1.5V @ 100μA
Datasheets
SSM3K15ACT(TPL3)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K15ACT(TPL3) from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-101, SOT-883, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, SSM3K15ACT(TPL3) pinout, SSM3K15ACT(TPL3) datasheet PDF, SSM3K15ACT(TPL3) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM3K15ACT(TPL3) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation SSM3K15ACT(TPL3)


N-Channel Tape & Reel (TR) 3.6 Ω @ 10mA, 4V ±20V 13.5pF @ 3V SC-101, SOT-883

SSM3K15ACT(TPL3) Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13.5pF @ 3V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.

SSM3K15ACT(TPL3) Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage


SSM3K15ACT(TPL3) Applications


There are a lot of Toshiba Semiconductor and Storage
SSM3K15ACT(TPL3) applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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