SSM3K09FU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C

Published :

2014

Series :

π-MOSVI

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.8V @ 100μA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

3.3V 10V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

700m Ω @ 200MA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 5V

Drain-source On Resistance-Max :

1.7Ohm

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.4A

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G3

Power Dissipation-Max :

150mW Ta

Number of Terminations :

3

Continuous Drain Current (ID) :

400mA

Package / Case :

SC-70, SOT-323