SSM3J56MFV,L3F
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- Mfr.Part #
- SSM3J56MFV,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 800MA VESM
- Stock
- 628,791
- In Stock ：
- 628,791
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- U-MOSVI
- Operating Temperature :
- 150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Ta
- Number of Channels :
- 1
- Power Dissipation-Max :
- 150mW Ta
- Vgs (Max) :
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 100pF @ 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Cut Tape (CT)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Rds On (Max) @ Id, Vgs :
- 390m Ω @ 800mA, 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- -800mA
- Power Dissipation :
- 150mW
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -20V
- Turn On Delay Time :
- 8 ns
- Threshold Voltage :
- -300mV
- RoHS Status :
- RoHS Compliant
- Height :
- 550μm
- FET Type :
- P-Channel
- Package / Case :
- SOT-723
- Factory Lead Time :
- 12 Weeks
- Published :
- 2014
- Turn-Off Delay Time :
- 26 ns
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SSM3J56MFV,L3F
P-Channel Cut Tape (CT) 390m Ω @ 800mA, 4.5V ±8V 100pF @ 10V 20V SOT-723
SSM3J56MFV,L3F Overview
A device's maximal input capacitance is 100pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -800mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -300mV threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.2V 4.5V).
SSM3J56MFV,L3F Features
a continuous drain current (ID) of -800mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 26 ns
a threshold voltage of -300mV
a 20V drain to source voltage (Vdss)
SSM3J56MFV,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3J56MFV,L3F applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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