SSM3J35AMFV,L3F
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- Mfr.Part #
- SSM3J35AMFV,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 250MA VESM
- Stock
- 12,325
- In Stock ：
- 12,325
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Package / Case :
- SOT-723
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 150mA, 4.5V
- Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 150mW Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Vgs (Max) :
- ±10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1V @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 42pF @ 10V
- Mounting Type :
- Surface Mount
- Series :
- U-MOSVII
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- SSM3J35AMFV,L3F
P-Channel Tape & Reel (TR) 1.4 Ω @ 150mA, 4.5V ±10V 42pF @ 10V 20V SOT-723
SSM3J35AMFV,L3F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 42pF @ 10V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.2V 4.5V volts (1.2V 4.5V).
SSM3J35AMFV,L3F Features
a 20V drain to source voltage (Vdss)
SSM3J35AMFV,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3J35AMFV,L3F applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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