SSM3J35AFS,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.0021Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Number of Elements :

1

Package / Case :

SC-75, SOT-416

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 100µA

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 150mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Drain Current-Max (Abs) (ID) :

0.25A

Surface Mount :

yes

Number of Terminations :

3

Mounting Type :

Surface Mount

Terminal Position :

Dual

Series :

U-MOSVII

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

150mW Ta

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

42pF @ 10V

Vgs (Max) :

±10V

FET Type :

P-Channel

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

150°C